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參數(shù)資料
| 型號： | GS882V18BB |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| 中文描述： | 為512k × 18，256K × 36 9Mb以上SCD的/雙氰胺同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 26/36頁 |
| 文件大?。?/td> | 732K |
| 代理商： | GS882V18BB |
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GS882V18/36BB/D-333/300/250/200
Rev: 1.02 3/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
26/36
2004, GSI Technology
Tap Controller Instruction Set
Overview
There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific
(Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be
implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load
address, data or control signals into the RAM or to preload the I/O buffers.
When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01.
When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired
instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the
TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this
device is listed in the following table.
JTAG Tap Controller State Diagram
Instruction Descriptions
BYPASS
When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This
occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facili-
tate testing of other devices in the scan path.
Select DR
Capture DR
0
Shift DR
Exit1 DR
Pause DR
Exit2 DR
Update DR
1
Select IR
Capture IR
0
Shift IR
Exit1 IR
Pause IR
Exit2 IR
Update IR
1
Test Logic Reset
Run Test Idle
0
1
0
1
1
0
1
1
1
0
0
1
1
0
0
0
0
1
1
0
0
0
0
0
1
1
1
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS882V18BB-200 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS882V18BB-200I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS882V18BB-250 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS882V18BB-250I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS882V18BB-300 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS882V18BB-150 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 7.5NS/3.8NS 119FBGA - Trays |
| GS882V18BB-150I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 7.5NS/3.8NS 119FBGA - Trays |
| GS882V18BB-300 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 5NS/2.5NS 119FBGA - Trays |
| GS882V18BB-300I | 制造商:GSI Technology 功能描述:512K X 18 (9 MEG) SYNCH BURST , SCD, JTAG, FLEXDRIVE - Trays |
| GS882V18BB-333 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 4.5NS/2.5NS 119FBGA - Trays |
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