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  • 參數(shù)資料
    型號(hào): GS882V18BB-333I
    廠商: GSI TECHNOLOGY
    元件分類: DRAM
    英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
    中文描述: 512K X 18 CACHE SRAM, 4.5 ns, PBGA119
    封裝: FBGA-119
    文件頁數(shù): 9/36頁
    文件大?。?/td> 732K
    代理商: GS882V18BB-333I
    GS882V18/36BB/D-333/300/250/200
    Rev: 1.02 3/2005
    Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
    9/36
    2004, GSI Technology
    Mode Pin Functions
    Note:
    There are pull-up devices onthe ZQ, SCD, and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the
    chip will operate in the default states as specified in the above tables.
    Burst Counter Sequences
    BPR 1999.05.18
    Mode Name
    Pin Name
    State
    L
    H
    L
    H or NC
    L or NC
    Function
    Linear Burst
    Interleaved Burst
    Flow Through
    Pipeline
    Active
    Standby, I
    DD
    = I
    SB
    Dual Cycle Deselect
    Single Cycle Deselect
    High Drive (Low Impedance)
    Low Drive (High Impedance)
    Activate DQPx I/Os (x18/x36 mode)
    Deactivate DQPx I/Os (x16/x32 mode)
    Burst Order Control
    LBO
    Output Register Control
    FT
    Power Down Control
    ZZ
    H
    Single/Dual Cycle Deselect Control
    SCD
    L
    H or NC
    L
    H or NC
    L
    H or NC
    FLXDrive Output Impedance Control
    ZQ
    9th Bit Enable
    PE
    Note:
    The burst counter wraps to initial state on the 5th clock.
    Note:
    The burst counter wraps to initial state on the 5th clock.
    Linear Burst Sequence
    A[1:0] A[1:0] A[1:0] A[1:0]
    1st address
    00
    01
    10
    11
    2nd address
    01
    10
    11
    00
    3rd address
    10
    11
    00
    01
    4th address
    11
    00
    01
    10
    Interleaved Burst Sequence
    A[1:0] A[1:0] A[1:0] A[1:0]
    1st address
    00
    01
    10
    11
    2nd address
    01
    00
    11
    10
    3rd address
    10
    11
    00
    01
    4th address
    11
    10
    01
    00
    相關(guān)PDF資料
    PDF描述
    GS882V18BD-200 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
    GS882V18BD-200I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
    GS882V18BD-250 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
    GS882V18BD-250I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
    GS882V18BD-300 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    GS882V18BD-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 7.5NS/3.8NS 165FBGA - Trays
    GS882V18BD-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 6.5NS/3NS 165FBGA - Trays
    GS882V18BD-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 5.5NS/2.5NS 165FBGA - Trays
    GS882V18BD-250I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 5.5NS/2.5NS 165FBGA - Trays
    GS882V18BGB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 6.5NS/3NS 119FBGA - Trays