參數(shù)資料
型號: GS88237BGB-250IV
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 256K x 36 9Mb SCD/DCD Sync Burst SRAM
中文描述: 256K X 36 CACHE SRAM, 2.5 ns, PBGA119
封裝: ROHS COMPLIANT, FPBGA-119
文件頁數(shù): 28/28頁
文件大?。?/td> 925K
代理商: GS88237BGB-250IV
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
WR
R
WR
X
Simple
Syn
chronous
Operation
Simple
Burst
Synch
ronous
Operation
CR
R
CW
CR
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
GS88237BB/D-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 12/2008
9/28
2003, GSI Technology
Simplified State Diagram
相關(guān)PDF資料
PDF描述
GS88237BGB-250V 256K x 36 9Mb SCD/DCD Sync Burst SRAM
GS88237BGD-200IV 256K x 36 9Mb SCD/DCD Sync Burst SRAM
GS88237BGD-200V 256K x 36 9Mb SCD/DCD Sync Burst SRAM
GS88237BGD-250IV 256K x 36 9Mb SCD/DCD Sync Burst SRAM
GS88237BGD-250V 256K x 36 9Mb SCD/DCD Sync Burst SRAM
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