參數(shù)資料
型號(hào)： GS88237BD-200IV
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 256K x 36 9Mb SCD/DCD Sync Burst SRAM
中文描述： 256K X 36 CACHE SRAM, 2.5 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, FPBGA-165
文件頁數(shù)： 3/28頁
文件大小： 925K
代理商： GS88237BD-200IV
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 4.6
V
VDDQ
Voltage on VDDQ Pins
–0.5 to VDD
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 4.6 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDD +0.5 (≤ 4.6 V max.)
V
IIN
Input Current on Any Pin
+/–20
mA
IOUT
Output Current on Any I/O Pin
+/–20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
–55 to 125
oC
TBIAS
Temperature Under Bias
–55 to 125
oC
GS88237BB/D-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 12/2008
11/28
2003, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
VDD1
1.7
1.8
2.0
V
2.5 V Supply Voltage
VDD2
2.3
2.5
2.7
V
1.8 V VDDQ I/O Supply Voltage
VDDQ1
1.7
1.8
VDD
V
2.5 V VDDQ I/O Supply Voltage
VDDQ2
2.3
2.5
VDD
V
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
VDDQ2 & VDDQ1 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V
1
相關(guān)PDF資料
PDF描述
GS88237BD-200V 256K x 36 9Mb SCD/DCD Sync Burst SRAM
GS88237BD-250IV 256K x 36 9Mb SCD/DCD Sync Burst SRAM
GS88237BD-250V 256K x 36 9Mb SCD/DCD Sync Burst SRAM
GS88237BGB-200IV 256K x 36 9Mb SCD/DCD Sync Burst SRAM
GS88237BGB-200V 256K x 36 9Mb SCD/DCD Sync Burst SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS88237CB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.7NS 119FPBGA - Trays
GS88237CB-200I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.7NS 119FPBGA - Trays
GS88237CB-200IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 2.5NS 119FPBGA - Trays
GS88237CB-200V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 2.5NS 119FPBGA - Trays
GS88237CB-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.3NS 119FPBGA - Trays
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