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參數(shù)資料
| 型號： | GS88237AB |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 256K x 36 9Mb Synchronous Burst SRAMs |
| 中文描述： | 256K × 36 9Mb以上同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 1/28頁 |
| 文件大?。?/td> | 566K |
| 代理商： | GS88237AB |
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GS88237AB-250/225/200/166/150/133
256K x 36
9Mb Synchronous Burst SRAMs
250 MHz–133 MHz
2.5 V or 3.3 V VDD
2.5 V or 3.3 V I/O
119-Bump BGA
Commercial Temp
Industrial Temp
Rev: 1.02 11/2004
1/28
2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Features
Single/Dual Cycle Deselect selectable
IEEE 1149.1 JTAG-compatible Boundary Scan
ZQ mode pin for user-selectable high/low output drive
2.5 V or 3.3 V +10%/–10% core power supply
2.5 V or 3.3 V I/O supply
LBO pin for Linear or Interleaved Burst mode
Internal input resistors on mode pins allow floating mode pins
Byte Write (BW) and/or Global Write (GW) operation
Internal self-timed write cycle
Automatic power-down for portable applications
JEDEC-standard 119-bump BGA package
Functional Description
Applications
The GS88237AB is a 9,437,184-bit high performance
synchronous SRAM with a 2-bit burst address counter. Although
of a type originally developed for Level 2 Cache applications
supporting high performance CPUs, the device now finds
application in synchronous SRAM applications, ranging from
DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no degradation of chip performance.
SCD and DCD Pipelined Reads
The GS88237AB is a SCD (Single Cycle Deselect) and DCD
(Dual Cycle Deselect) pipelined synchronous SRAM. DCD
SRAMs pipeline disable commands to the same degree as read
commands. SCD SRAMs pipeline deselect commands one stage
less than read commands. SCD RAMs begin turning off their
outputs immediately after the deselect command has been
captured in the input registers. DCD RAMs hold the deselect
command for one full cycle and then begin turning off their
outputs just after the second rising edge of clock. The user may
configure this SRAM for either mode of operation using the SCD
mode input.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.
FLXDrive
The ZQ pin allows selection between high drive strength (ZQ low)
for multi-drop bus applications and normal drive strength (ZQ
floating or high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High)
of the ZZ signal, or by stopping the clock (CK). Memory data is
retained during Sleep mode.
Core and Interface Voltages
The GS88237AB operates on a 2.5 V or 3.3 V power supply. All
input are 3.3 V and 2.5 V compatible. Separate output power
(VDDQ) pins are used to decouple output noise from the internal
circuits and are 3.3 V and 2.5 V compatible.
Parameter Synopsis
-250 -225 -200 -166 -150 -133 Unit
Pipeline
3-1-1-1
tKQ
tCycle
2.0
4.0
2.2
4.4
2.5
5.0
2.9
6.0
3.3
6.7
3.5
7.5
ns
3.3 V
Current
330 300 270 230 215 190 mA
2.5 V
Current
320 295 265 225 210 185 mA
相關PDF資料 |
PDF描述 |
|---|---|
| GS88237BB-250V | 256K x 36 9Mb SCD/DCD Sync Burst SRAM |
| GS88237BD-200IV | 256K x 36 9Mb SCD/DCD Sync Burst SRAM |
| GS88237BD-200V | 256K x 36 9Mb SCD/DCD Sync Burst SRAM |
| GS88237BD-250IV | 256K x 36 9Mb SCD/DCD Sync Burst SRAM |
| GS88237BD-250V | 256K x 36 9Mb SCD/DCD Sync Burst SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS88237CB-200 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.7NS 119FPBGA - Trays |
| GS88237CB-200I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.7NS 119FPBGA - Trays |
| GS88237CB-200IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 2.5NS 119FPBGA - Trays |
| GS88237CB-200V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 2.5NS 119FPBGA - Trays |
| GS88237CB-250 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.3NS 119FPBGA - Trays |
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