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參數資料
| 型號： | GS881Z36AT-166I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 256K X 36 ZBT SRAM, 7 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數： | 15/31頁 |
| 文件大?。?/td> | 508K |
| 代理商： | GS881Z36AT-166I |
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GS881Z18/36AT-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
15/31
2001, GSI Technology
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 2.5 V)
Note:
These parameters are sample tested.
AC Test Conditions
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Parameter
Conditions
V
DD
– 0.2 V
0.2 V
1 V/ns
V
DD
/2
V
DDQ
/2
Fig. 1
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
3.
50% tKC
V
SS
–
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
50% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
DQ
V
DDQ/2
50
30pF
*
Output Load 1
* Distributed Test Jig Capacitance
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相關代理商/技術參數 |
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|---|---|
| GS881Z36AT-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS881Z36AT-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS881Z36AT-225 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS881Z36AT-225I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS881Z36AT-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
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