- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383054 > GS881Z18BT-V (GSI TECHNOLOGY) 9Mb Pipelined and Flow Through Synchronous NBT SRAM PDF資料下載
參數(shù)資料
| 型號： | GS881Z18BT-V |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 9MB的流水線和流量，通過同步唑的SRAM |
| 文件頁數(shù)： | 18/37頁 |
| 文件大?。?/td> | 773K |
| 代理商： | GS881Z18BT-V |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁當(dāng)前第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage on V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to V
DD
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
GS881Z18/32/36B(T/D)-xxxV
Rev: 1.00 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
18/37
2006, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD1
1.7
1.8
2.0
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ1
1.7
1.8
V
DD
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
V
DD
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS881Z32BD-150IV | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS881Z18 | 8Mb Pipelined and Flow Through Synchronous NBT SRAM(8M位流水線式和流通型同步NBT靜態(tài)RAM) |
| GS881Z36 | 8Mb Pipelined and Flow Through Synchronous NBT SRAM(8M位流水線式和流通型同步NBT靜態(tài)RAM) |
| GS882Z18B-100 | 8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS882Z18B-100I | 8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS881Z18CD-150I | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 9MBIT 512KX18 7.5NS/3.8NS 165FPBGA - Trays |
| GS881Z18CD-200 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 9MBIT 512KX18 6.5NS/3NS 165FPBGA - Trays |
| GS881Z18CD-250 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 9MBIT 512KX18 5.5NS/2.5NS 165FPBGA - Trays |
| GS881Z18CD-250I | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 9MBIT 512KX18 5.5NS/2.5NS 165FPBGA - Trays |
| GS881Z18CD-300 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 9MBIT 512KX18 5NS/2.5NS 165FPBGA - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。