參數(shù)資料
型號(hào): GS881E32AD-133T
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
中文描述: 256K X 32 CACHE SRAM, 8.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁數(shù): 25/36頁
文件大小: 913K
代理商: GS881E32AD-133T
GS881E18(T/D)/GS881E32A(D)/GS881E36A(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 3/2005
31/36
2001, GSI Technology
TQFP Package Drawing (Package T)
D1
D
E1
E
Pin
1
b
e
c
L
L1
A2
A1
Y
θ
Notes:
1. All dimensions are in millimeters (mm).
2. Package width and length do not include mold protrusion.
Symbol
Description
Min. Nom. Max
A1
Standoff
0.05
0.10
0.15
A2
Body Thickness
1.35
1.40
1.45
b
Lead Width
0.20
0.30
0.40
c
Lead Thickness
0.09
0.20
D
Terminal Dimension
21.9
22.0
22.1
D1
Package Body
19.9
20.0
20.1
E
Terminal Dimension
15.9
16.0
16.1
E1
Package Body
13.9
14.0
14.1
e
Lead Pitch
0.65
L
Foot Length
0.45
0.60
0.75
L1
Lead Length
1.00
Y
Coplanarity
0.10
θ
Lead Angle
0
°
7
°
相關(guān)PDF資料
PDF描述
GS881E32AD-150 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E32AD-150I 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E32AD-150IT 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E32AD-150T 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E32AD-166 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS881E32AD-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E32AD-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E32AD-150IT 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E32AD-150T 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E32AD-166 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs