參數(shù)資料
型號: GS881E18AD-150I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 7.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁數(shù): 6/36頁
文件大?。?/td> 913K
代理商: GS881E18AD-150I
GS881E18(T/D)/GS881E32A(D)/GS881E36A(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 3/2005
14/36
2001, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
WR
R
W
R
X
CR
R
CW
CR
W
CW
W
CW
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a deselect cycle. Dummy read cycles increment the address counter just like normal read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
相關PDF資料
PDF描述
GS881E18AD-150IT 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-150T 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-166 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-166I 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-166IT 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
相關代理商/技術參數(shù)
參數(shù)描述
GS881E18AD-150IT 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-150T 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-166 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-166I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-166IT 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs