參數(shù)資料
型號(hào): GS881E18AD-133T
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 8.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁(yè)數(shù): 3/36頁(yè)
文件大?。?/td> 913K
代理商: GS881E18AD-133T
GS881E18(T/D)/GS881E32A(D)/GS881E36A(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 3/2005
11/36
2001, GSI Technology
Notes:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4. Bytes “C” and “D” are only available on the x32/x36 versions.
Byte Write Truth Table
Function
GW
BW
BA
BB
BC
BD
Notes
Read
H
X
1
Read
H
L
HHHH
1
Write byte a
H
L
H
2, 3
Write byte b
H
L
H
L
H
2, 3
Write byte c
H
L
H
L
H
2, 3, 4
Write byte d
H
L
H
L
2, 3, 4
Write all bytes
H
LLLLL
2, 3, 4
Write all bytes
L
XXXX
X
相關(guān)PDF資料
PDF描述
GS881E18AD-150 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-150I 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-150IT 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-150T 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-166 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS881E18AD-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-150IT 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-150T 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-166 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs