參數(shù)資料
型號: GS88118AGT-133T
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 512K X 18 CACHE SRAM, 8.5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 8/36頁
文件大小: 915K
代理商: GS88118AGT-133T
GS88118A(T/D)/GS88132A(D)/GS88136A(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 3/2005
16/36
2001, GSI Technology
VDDQ3 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
2.0
VDD + 0.3
V1
VDD Input Low Voltage
VIL
–0.3
0.8
V
1
VDDQ I/O Input High Voltage
VIHQ
2.0
VDDQ + 0.3
V1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
0.8
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
VDDQ2 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
VDD + 0.3
V1
VDD Input Low Voltage
VIL
–0.3
0.3*VDD
V1
VDDQ I/O Input High Voltage
VIHQ
0.6*VDD
VDDQ + 0.3
V1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
0.3*VDD
V1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
TA
025
70
°C2
Ambient Temperature (Industrial Range Versions)
TA
–40
25
85
°C2
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
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