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參數(shù)資料
| 型號： | GS880V18BT-250T |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 512K X 18 CACHE SRAM, 5.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 8/23頁 |
| 文件大?。?/td> | 600K |
| 代理商： | GS880V18BT-250T |
GS880V18/32/36BT-333/300/250/200
Rev: 1.02 3/2005
16/23
2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-333
-300
-250
-200
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
3.0
—
3.3
—
4.0
—
5.0
—
ns
Clock to Output Valid
tKQ
—
2.5
—
2.5
—
2.5
—
3.0
ns
Clock to Output Invalid
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
ns
Clock to Output in Low-Z
tLZ1
1.5
—
1.5
—
1.5
—
1.5
—
ns
Setup time
tS
1.0
—
1.0
—
1.2
—
1.4
—
ns
Hold time
tH
0.1
—
0.1
—
0.2
—
0.4
—
ns
Flow
Through
Clock Cycle Time
tKC
4.5
—
5.0
—
5.5
—
6.5
—
ns
Clock to Output Valid
tKQ
—
4.5
—
5.0
—
5.5
—
6.5
ns
Clock to Output Invalid
tKQX
2.0
—
2.0
—
2.0
—
2.0
—
ns
Clock to Output in Low-Z
tLZ1
2.0
—
2.0
—
2.0
—
2.0
—
ns
Setup time
tS
1.3
—
1.4
—
1.5
—
1.5
—
ns
Hold time
tH
0.3
—
0.4
—
0.5
—
0.5
—
ns
Clock HIGH Time
tKH
1.0
—
1.0
—
1.3
—
1.3
—
ns
Clock LOW Time
tKL
1.2
—
1.2
—
1.5
—
1.5
—
ns
Clock to Output in
High-Z
tHZ1
1.5
2.5
1.5
2.5
1.5
2.5
1.5
3.0
ns
G to Output Valid
tOE
—
2.5
—
2.5
—
2.5
—
3.0
ns
G to output in Low-Z
tOLZ1
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ1
—
2.5
—
2.5
—
2.5
—
3.0
ns
ZZ setup time
tZZS2
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH2
1
—
1
—
1
—
1
—
ns
ZZ recovery
tZZR
20
—
20
—
20
—
20
—
ns
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| GS880Z32CGT-250 | 256K X 32 ZBT SRAM, 5.5 ns, PQFP100 |
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| GS88136BD-333 | 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS880V18BT-300 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS880V18BT-300I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
| GS880V18BT-333 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 4.5NS/2.5NS 100TQFP - Trays |
| GS880V18BT-333I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 4.5NS/2.5NS 100TQFP - Trays |
| GS880V32BGT-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs |
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