參數(shù)資料
型號(hào): GS880F36BGT-7.5T
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
封裝: LEAD FREE, TQFP-100
文件頁數(shù): 8/23頁
文件大?。?/td> 765K
代理商: GS880F36BGT-7.5T
GS880F18/32/36BT-4.5/5/5.5/6.5/7.5
Rev: 1.04 6/2007
16/23
2001, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1. IDD and IDDQ apply to any combination of VDD3, VDD2, VDDQ3, and VDDQ2 operation.
2. All parameters listed are worst case scenario.
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-4.5
-5
-5.5
-6.5
-7.5
Unit
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
Operating
Current
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
(x32/
x36)
Flow
Through
IDD
IDDQ
205
25
225
25
185
25
205
25
160
25
180
25
140
20
160
20
130
15
150
15
mA
(x18)
Flow
Through
IDD
IDDQ
185
15
205
15
170
15
190
15
145
15
165
15
130
10
150
10
120
8
140
8
mA
Standby
Current
ZZ
≥ VDD – 0.2 V
Pipeline
ISB
40
50
40
50
40
50
40
50
40
50
mA
Flow
Through
ISB
40
50
40
50
40
50
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
Pipeline
IDD
95
100
90
95
85
90
75
80
60
65
mA
Flow
Through
IDD
65
60
65
60
65
50
55
50
55
mA
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