參數(shù)資料
型號: GS88036T-100T
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 256K X 36 CACHE SRAM, 12 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 2/25頁
文件大?。?/td> 1031K
代理商: GS88036T-100T
Rev: 1.11 8/2000
10/25
2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS88018/32/36T-11/11.5/100/80/66
First Write
First Read
Burst Read
Deselect
R
W
CR
CW
X
W
R
W
R
X
CR
R
CW
CR
W
CW
W
CW
Simplified State Diagram with G
Notes:
1. The diagram shows supported (tested) synchronous state transitions, plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal Read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS88036T-11 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs
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GS88036T--11.5I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs
GS88036T-11I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs
GS88036T-80 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs