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| 型號(hào)： | GS84036T-180T |
| 英文描述： | x36 Fast Synchronous SRAM |
| 中文描述： | x36快速同步SRAM |
| 文件頁數(shù)： | 25/31頁 |
| 文件大小： | 717K |
| 代理商： | GS84036T-180T |
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Rev: 2.05 6/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
25/31
1999, Giga Semiconductor, Inc.
.
GS84018/32/36T/B-180/166/150/100
Sleep Mode Timing Diagram
Application Tips
Single and Dual Cycle Deselect
SCD devices force the use of “dummy read cycles” (read cycles that are launched normally but that are ended with the output drivers inactive) in
a fully synchronous environment. Dummy read cycles waste performance but their use usually assures there will be no bus contention in
transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on dummy cycles and are logically simpler to
manage in a multiple bank application (wait states need not be inserted at bank address boundary crossings) but greater care must be exercised
to avoid excessive bus contention.
CK
ADSP
ADSC
tH
tKH tKL
tKC
tS
ZZ
tZZR
tZZH
tZZS
~
~
~
~
Snooze
This Material Copyrighted by Its Respective Manufacturer
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| GS840 | |
| GS84018B-100 | x18 Fast Synchronous SRAM |
| GS84018B-100I | x18 Fast Synchronous SRAM |
| GS84018B-100IT | x18 Fast Synchronous SRAM |
| GS84018B-150 | x18 Fast Synchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS840E18AB-100 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18AB-100I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18AB-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18AB-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840E18AB-166 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
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