參數(shù)資料
型號(hào): GS84036AT-100
廠商: Electronic Theatre Controls, Inc.
英文描述: Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
中文描述: 256 × 18,128K的× 32,128K的× 36 4Mb的同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 20/31頁(yè)
文件大小: 911K
代理商: GS84036AT-100
Rev: 1.12 7/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
20/31
1999, Giga Semiconductor, Inc.
Preliminary
GS84018/32/36AT/B-180/166/150/100
CK
ADSP
ADSC
ADV
GW
BW
G
WR2
WR3
WR1
WR1
WR2
WR3
tKC
Single Write
Burst Write
D2a
D2b
D2c
D2d
D3a
D1
a
t
KL
t
KH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
Write specified byte for 2
a
and all bytes for 2
b
, 2
c
& 2
d
ADV must be inactive for ADSP Write
ADSC initiated write
ADSP is blocked by E
1
inactive
A
0
–An
B
A
–B
D
DQ
A
–DQ
D
Write
Deselected
Hi-Z
Write Cycle Timing
E
1
E
3
tS tH
tS tH
tS tH
E
2
and E
3
only sampled with ADSP or ADSC
E
1
masks ADSP
E
2
Deselected with E
2
相關(guān)PDF資料
PDF描述
GS84036AT-100I Flasher; Contacts:DPDT; Time Range:0.6 sec. to 60 sec.; Timing Function:Adjustable Recycling; Contact Carrying Power:3W; Supply Voltage:12VDC
GS84018 4Mb(256K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS84032 4Mb(128K x 32Bit) Synchronous Burst SRAM(4M位(128K x 32位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS84036 4Mb(128K x 36Bit) Synchronous Burst SRAM(4M位(128K x 36位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS840E18A 4Mb(256K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
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