參數資料
型號: GS84032T-180T
英文描述: x32 Fast Synchronous SRAM
中文描述: X32號,快速同步SRAM
文件頁數: 16/31頁
文件大小: 717K
代理商: GS84032T-180T
Rev: 2.05 6/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
16/31
1999, Giga Semiconductor, Inc.
.
GS84018/32/36T/B-180/166/150/100
Capacitance
(T
A
=25
o
C, f=1MH
Z
, V
DD
=3.3V)
Note: This parameter is sample tested.
Package Thermal Characteristics
Notes:
Notes:
1.
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87.
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
4. For x18 configuration, consult factory.
2.
3.
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Control Input Capacitance
C
I
C
IN
C
OUT
V
DD
=3.3V
V
IN
=0V
V
OUT
=0V
3
4
pF
Input Capacitance
4
5
pF
Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
TQFP Max
BGA Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
R
Θ
JA
R
Θ
JA
R
Θ
JC
40
38
°
C/W
°
C/W
°
C/W
1,2,4
Junction to Ambient (at 200 lfm)
four
24
21
1,2,4
Junction to Case (TOP)
9
5
3,4
20% tKC
V
SS
-2.0V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+-2.0V
50%
V
DD
V
IL
This Material Copyrighted by Its Respective Manufacturer
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