參數(shù)資料
型號: GS84018T-100
英文描述: x18 Fast Synchronous SRAM
中文描述: x18快速同步SRAM
文件頁數(shù): 11/31頁
文件大?。?/td> 717K
代理商: GS84018T-100
Rev: 2.05 6/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
11/31
1999, Giga Semiconductor, Inc.
.
GS84018/32/36T/B-180/166/150/100
Mode Pin Functions
Note:
There are pull up devices on LBO and FT pins and a pull down device on the ZZ pin, so those input pins can be unconnected and the chip will
operate in the default states as specified in the above tables.
Burst Counter Sequences
Linear Burst Sequence
Byte Write Truth Table
Note:
1.
2.
3.
4.
All byte outputs are active in read cycles regardle
ss
of the state of Byte Write Enable inputs.
Byte Write Enable inputs B
A
, B
B
, B
C
and/or B
D
may be used in any combination with BW to write single or multiple bytes.
All byte I/O’s remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
Bytes “
C
” and “
D
” are only available on the x32 and x36 versions.
Mode Name
Pin Name
State
L
H or NC
L
H or NC
L or NC
Function
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
Burst Order Control
LBO
Output Register Control
FT
Power Down Control
ZZ
H
Function
GW
BW
B
A
B
B
B
C
B
D
Notes
Read
H
H
X
X
X
X
1
Read
H
L
H
H
H
H
1
Write byte
A
H
L
L
H
H
H
2, 3
Write byte
B
H
L
H
L
H
H
2, 3
Write byte
C
H
L
H
H
L
H
2, 3, 4
Write byte
D
H
L
H
H
H
L
2, 3, 4
Write all bytes
H
L
L
L
L
L
2, 3, 4
Write all bytes
L
X
X
X
X
X
Note: The burst counter wraps to initial state on the 5th clock.
I
nterleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0]
00
01
10
11
A[1:0]
01
10
11
00
A[1:0]
10
11
00
01
A[1:0]
11
00
01
10
1st address
2nd address
3rd address
4th address
A[1:0]
00
01
10
11
A[1:0]
01
00
11
10
A[1:0]
10
11
00
01
A[1:0]
11
10
01
00
1st address
2nd address
3rd address
4th address
This Material Copyrighted by Its Respective Manufacturer
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