參數(shù)資料
型號: GS8342D11BD-500IT
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 4M X 9 QDR SRAM, 0.45 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FPBGA-165
文件頁數(shù): 9/31頁
文件大小: 950K
代理商: GS8342D11BD-500IT
Operating Currents
Parameter
Symbol
Test Conditions
-550
-500
-450
-400
-350
Notes
to
70°C
–40°
to
85°C
to
70°C
–40°
to
85°C
to
70°C
–40°
to
85°C
to
70°C
–40°
to
85°C
to
70°C
–40°
to
85°C
Operating
Current(x36):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
TBD
2, 3
Operating
Current(x18):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
TBD
2, 3
Operating
Current (x9):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
TBD
2, 3
Operating
Current (x8):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
TBD
2, 3
Standby
Current
(NOP): DDR
ISB1
Device deselected,
IOUT = 0 mA, f = Max,
All Inputs
≤ 0.2 V
or
≥ VDD – 0.2 V
TBD
2, 4
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, IOUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 4/2011
17/31
2011, GSI Technology
Preliminary
GS8342D06/11/20/38BD-550/500/450/400/350
相關(guān)PDF資料
PDF描述
GS8342D11BD-500 4M X 9 QDR SRAM, 0.45 ns, PBGA165
GS8342D11BD-550IT 4M X 9 QDR SRAM, 0.45 ns, PBGA165
GS8342D37BD-300I 1M X 36 QDR SRAM, 0.45 ns, PBGA165
GS8342QT07BD-357 4M X 8 QDR SRAM, 0.45 ns, PBGA165
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