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參數(shù)資料
| 型號： | GS8324Z36GB-250IT |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 1M X 36 ZBT SRAM, 6 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 1.27 MM PITCH, BGA-119 |
| 文件頁數(shù)： | 18/46頁 |
| 文件大?。?/td> | 1157K |
| 代理商： | GS8324Z36GB-250IT |
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Rev: 1.00 10/2001
25/46
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS8324Z18(B/C)/GS8324Z36(B/C)/GS8324Z72(C)
Note: These parameters are sample tested.
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
°C
2
Ambient Temperature (Industrial Range Versions)
TA
–
40
25
85
°C
2
Note:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2.
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Capacitance
(TA = 25
oC, f = 1 MHZ, V
DD = 2.5 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
6.5
7.5
pF
Input/Output Capacitance (x36/x72)
CI/O
VOUT = 0 V
6
7
pF
Input/Output Capacitance (x18)
CI/O
VOUT = 0 V
8.5
9.5
pF
Package Thermal Characteristics
Rating
Layer Board
Symbol
Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
RΘJA
40
°C/W
1,2
Junction to Ambient (at 200 lfm)
four
RΘJA
24
°C/W
1,2
Junction to Case (TOP)
—
RΘJC
9
°C/W
3
20% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD + 2.0 V
50%
VDD
VIL
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