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  • 參數(shù)資料
    型號: GS8322V18B-200
    廠商: GSI TECHNOLOGY
    元件分類: DRAM
    英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
    中文描述: 2M X 18 CACHE SRAM, 7.5 ns, PBGA119
    封裝: 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
    文件頁數(shù): 12/42頁
    文件大?。?/td> 1038K
    代理商: GS8322V18B-200
    Mode Pin Functions
    Mode Name
    Pin
    Name
    State
    Function
    Burst Order Control
    LBO
    L
    H
    L
    Linear Burst
    Interleaved Burst
    Flow Through
    Pipeline
    Active
    Standby, I
    DD
    = I
    SB
    Dual Cycle Deselect
    Single Cycle Deselect
    High Drive (Low Impedance)
    Low Drive (High Impedance)
    Output Register Control
    FT
    H or NC
    L or NC
    Power Down Control
    ZZ
    H
    Single/Dual Cycle Deselect Control
    SCD
    L
    H or NC
    L
    H or NC
    FLXDrive Output Impedance Control
    ZQ
    Preliminary
    GS8322V18(B/E)/GS8322V36(B/E)/GS8322V72(C)
    Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
    Rev: 1.04 4/2005
    12/42
    2003, GSI Technology
    Note:
    There are pull-up devices on the ZQ, SCD, and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the
    chip will operate in the default states as specified in the above tables.
    Note:
    The burst counter wraps to initial state on the 5th clock.
    Note:
    The burst counter wraps to initial state on the 5th clock.
    Linear Burst Sequence
    A[1:0] A[1:0] A[1:0] A[1:0]
    1st address
    00
    01
    10
    11
    2nd address
    01
    10
    11
    00
    3rd address
    10
    11
    00
    01
    4th address
    11
    00
    01
    10
    I
    nterleaved Burst Sequence
    A[1:0] A[1:0] A[1:0] A[1:0]
    1st address
    00
    01
    10
    11
    2nd address
    01
    00
    11
    10
    3rd address
    10
    11
    00
    01
    4th address
    11
    10
    01
    00
    Burst Counter Sequences
    BPR 1999.05.18
    相關(guān)PDF資料
    PDF描述
    GS8322V18B-200I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
    GS8322V18B-225 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
    GS8322V18B-225I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
    GS8322V18B-250 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
    GS8322V18B-250I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    GS8322V72C-133 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays
    GS8322V72C-133I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/4NS 209FBGA - Trays
    GS8322V72C-150 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/3.8NS 209FBGA - Trays
    GS8322V72C-150I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8.5NS/3.8NS 209FBGA - Trays
    GS8322V72C-166 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 36MBIT 512KX72 8NS/3.5NS 209FBGA - Trays