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參數(shù)資料
| 型號： | GS832018 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| 中文描述： | 200萬× 18，100萬× 32，100萬× 36同步突發(fā)靜態(tài)存儲器分配36MB |
| 文件頁數(shù)： | 18/25頁 |
| 文件大?。?/td> | 669K |
| 代理商： | GS832018 |
GS832018/32/36T-250/225/200/166/150/133
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 10/2004
18/25
2003, GSI Technology
Pipeline Mode Timing
Begin
Read A
Cont
Cont
Deselect Write B
Read C
Read C+1 Read C+2 Read C+3 Cont
Deselect
tHZ
tKQX
tKQ
tLZ
tH
tS
tOHZ
Q(A)
tOE
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tS
tH
tS
tH
tS
tH
tS
Burst Read
tKL
tKC
tKH
Single Write
Single Read
D(B)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
A
B
C
Deselected with E1
E1 masks ADSP
E2 and E3 only sampled with ADSP and ADSC
ADSC initiated read
CK
ADSP
ADSC
ADV
A0–An
GW
BW
Ba–Bd
E1
E2
E3
G
DQa–DQd
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS832018GT-133 | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832018GT-133I | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832032GT-133 | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832032GT-133I | Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:4700pF; Capacitance Tolerance:+/- 10%; Lead Pitch:7.5mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Series:184 RoHS Compliant: Yes |
| GS832032GT-150 | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS832018AGT-250 | 制造商:GSI Technology 功能描述:100 TQFP - Bulk |
| GS832018AGT-250I | 制造商:GSI Technology 功能描述:100 TQFP - Bulk |
| GS832018AGT-250IV | 制造商:GSI Technology 功能描述:100 TQFP - Bulk |
| GS832018AGT-250V | 制造商:GSI Technology 功能描述:100 TQFP - Bulk |
| GS832018AGT-400 | 制造商:GSI Technology 功能描述:100 TQFP - Bulk |
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