參數(shù)資料
型號(hào): GS820V32T6
英文描述: x32 Fast Synchronous SRAM
中文描述: X32號(hào),快速同步SRAM
文件頁(yè)數(shù): 11/23頁(yè)
文件大小: 649K
代理商: GS820V32T6
Rev: 1.08 2/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
11/23
2000, Giga Semiconductor, Inc.
GS82032AT/Q-200/180/166/133/100
AC Test Conditions
Notes:
1.
2.
3.
4.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Output Load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
Device is deselected as defined by the Truth Table.
Parameter
Conditions
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
2.3 V
0.2 V
1 V/ns
1.25 V
1.25 V
Fig. 1& 2
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
I
IL
V
IN
= 0 to V
DD
–1 uA
1 uA
ZZ Input Current
I
INZZ
V
DD
V
IN
V
IH
0V
V
IN
V
IH
V
DD
V
IN
V
IL
0V
V
IN
V
IL
Output Disable,
V
OUT
= 0 to V
DD
I
OH
= –4 mA, V
DDQ
= 2.375 V
I
OH
= –4 mA, V
DDQ
= 3.135 V
I
OL
= 4 mA
–1 uA
–1 uA
1 uA
300 uA
Mode Pin Input Current
I
INM
–300 uA
–1 uA
1 uA
1 uA
Output Leakage Current
I
OL
–1 uA
1 uA
Output High Voltage
V
OH
V
OH
V
OL
1.7 V
Output High Voltage
2.4 V
Output Low Voltage
0.4 V
DQ
VT = 1.25 V
50
30pF
*
DQ
2.5 V
Output Load 1
Output Load 2
225
225
5pF
*
* Distributed Test Jig Capacitance
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