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參數(shù)資料
| 型號： | GS820H32T |
| 元件分類： | SRAM |
| 英文描述： | 64K x 32 2M Synchronous Burst SRAM |
| 中文描述： | 64K的× 32 200萬同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 11/23頁 |
| 文件大?。?/td> | 649K |
| 代理商： | GS820H32T |
Rev: 1.08 2/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
11/23
2000, Giga Semiconductor, Inc.
GS82032AT/Q-200/180/166/133/100
AC Test Conditions
Notes:
1.
2.
3.
4.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Output Load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
Device is deselected as defined by the Truth Table.
Parameter
Conditions
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
2.3 V
0.2 V
1 V/ns
1.25 V
1.25 V
Fig. 1& 2
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
I
IL
V
IN
= 0 to V
DD
–1 uA
1 uA
ZZ Input Current
I
INZZ
V
DD
≥
V
IN
≥
V
IH
0V
≤
V
IN
≤
V
IH
V
DD
≥
V
IN
≥
V
IL
0V
≤
V
IN
≤
V
IL
Output Disable,
V
OUT
= 0 to V
DD
I
OH
= –4 mA, V
DDQ
= 2.375 V
I
OH
= –4 mA, V
DDQ
= 3.135 V
I
OL
= 4 mA
–1 uA
–1 uA
1 uA
300 uA
Mode Pin Input Current
I
INM
–300 uA
–1 uA
1 uA
1 uA
Output Leakage Current
I
OL
–1 uA
1 uA
Output High Voltage
V
OH
V
OH
V
OL
1.7 V
Output High Voltage
2.4 V
Output Low Voltage
0.4 V
DQ
VT = 1.25 V
50
30pF
*
DQ
2.5 V
Output Load 1
Output Load 2
225
225
5pF
*
* Distributed Test Jig Capacitance
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| GS820H32T-133 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM |
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| GS820H32T-138I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2M Synchronous Burst SRAM |
| GS820H32T-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2M Synchronous Burst SRAM |
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