參數(shù)資料
型號(hào): GS820E32T-66
廠商: Electronic Theatre Controls, Inc.
元件分類(lèi): DRAM
英文描述: 2M Synchronous Burst SRAM
中文描述: 200萬(wàn)同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 18/23頁(yè)
文件大?。?/td> 345K
代理商: GS820E32T-66
Rev: 1.03 2/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
18/23
1999, Giga Semconductor, Inc.
D
GS820E32T/Q-150/138/133/117/100/66
Pipelined DCD Read-Write Cycle Timing
CK
ADSP
ADV
GW
BW
E
1
E
3
G
E
2
WR1
Q1
A
D1
A
Q2
A
Q2
B
Q2
C
Q2
D
Single Read
Burst Read
tOE
tOHZ
tS
tS tH
tS
tS tH
tS
tH
tH
tS tH
tStH
tKH
E
1
masks ADSP
E
2
and E
3
only sampled with ADSP and ADSC
Deselected with E
3
DQ
A
- DQ
D
tKL
tKC
tS
tH
tH
Single Write
ADSP is blocked by E
1
inactive
tKQ
tS tH
Hi-Z
B
A
- B
D
RD1
WR1
RD2
tS tH
A
0
-A
n
ADSC
tS tH
ADSC initiated read
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