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參數(shù)資料
| 型號： | GS820E32AT-4T |
| 英文描述： | x32 Fast Synchronous SRAM |
| 中文描述： | X32號，快速同步SRAM |
| 文件頁數(shù)： | 10/23頁 |
| 文件大?。?/td> | 649K |
| 代理商： | GS820E32AT-4T |
Rev: 1.08 2/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
10/23
2000, Giga Semiconductor, Inc.
GS82032AT/Q-200/180/166/133/100
Capacitance
(T
A
= 25
°
C, f = 1 MH
Z
, V
DD
= 3.3 V)
Note: This parameter is sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
4. For x18 configuration, consult factory.
2.
3.
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Control Input Capacitance
C
I
C
IN
C
OUT
V
DD
= 3.3 V
V
IN
= 0 V
V
OUT
= 0 V
3
4
pF
Input Capacitance
4
5
pF
Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
TQFP Max
QFP Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
R
Θ
JA
R
Θ
JA
R
Θ
JC
40
TBD
°
C/W
°
C/W
°
C/W
1,2,4
Junction to Ambient (at 200 lfm)
four
24
TBD
1,2,4
Junction to Case (TOP)
9
TBD
3,4
20% tKC
V
SS
– 2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+- 2.0 V
50%
V
DD
V
IL
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| GS820E32AT-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM |
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