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參數(shù)資料
| 型號： | GS82032T-6I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 64K x 32 2M Synchronous Burst SRAM |
| 中文描述： | 64K的× 32 200萬同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 7/23頁 |
| 文件大?。?/td> | 760K |
| 代理商： | GS82032T-6I |
Rev: 1.04 2/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
7/23
2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E
1,
E
2,
E
3
) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control
inputs, and that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
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| GS82032Q-133 | 64K x 32 2M Synchronous Burst SRAM |
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| GS820E32A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2M Synchronous Burst SRAM |
| GS820E32AGT-133 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2Mb Synchronous Burst SRAM |
| GS820E32AGT-133I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2Mb Synchronous Burst SRAM |
| GS820E32AGT-166 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2Mb Synchronous Burst SRAM |
| GS820E32AGT-166I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2Mb Synchronous Burst SRAM |
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