參數(shù)資料
型號: GS82032Q-4I
廠商: Electronic Theatre Controls, Inc.
元件分類: DRAM
英文描述: 64K x 32 2M Synchronous Burst SRAM
中文描述: 64K的× 32 200萬同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 19/23頁
文件大小: 760K
代理商: GS82032Q-4I
Rev: 1.04 2/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
19/23
2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Sleep Mode Timing Diagram
Application Tips
Single and Dual Cycle Deselect
SCD devices force the use of “dummy read cycles” (read cycles that are launched normally, but that are ended with the output
drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance, but their use usually assures there
will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on
dummy cycles, and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address
boundary crossings), but greater care must be exercised to avoid excessive bus contention.
CK
ADSP
ADSC
tH
tKH tKL
tKC
tS
ZZ
tZZR
tZZH
tZZS
~
~
~
~
Snooze
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