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| 型號(hào)： | GS82032Q-150I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 64K x 32 2M Synchronous Burst SRAM |
| 中文描述： | 64K的× 32 200萬(wàn)同步突發(fā)靜態(tài)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 10/23頁(yè) |
| 文件大?。?/td> | 760K |
| 代理商： | GS82032Q-150I |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)當(dāng)前第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)
Rev: 1.04 2/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
10/23
2000, Giga Semiconductor, Inc.
Preliminary
GS82032T/Q-150/138/133/117/100/66
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 3.3 V)
Note: This parameter is sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient.
Temperature air flow, board density, and PCB thermal resistance.
SCMI G-38-87.
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
For x18 configuration, consult factory.
2.
3.
4.
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Control Input Capacitance
C
I
C
IN
C
OUT
V
DD
= 3.3 V
V
IN
= 0 V
V
OUT
= 0 V
3
4
pF
Input Capacitance
4
5
pF
Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
TQFP Max
QFP Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
R
Θ
JA
R
Θ
JA
R
Θ
JC
40
TBD
°
C/W
°
C/W
°
C/W
1,2,4
Junction to Ambient (at 200 lfm)
four
24
TBD
1,2,4
Junction to Case (TOP)
9
TBD
3,4
20% tKC
V
SS
-2.0V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+-2.0V
50%
V
DD
V
IL
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