參數(shù)資料
型號(hào): GS8170DD36C-250
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
中文描述: 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁(yè)數(shù): 18/29頁(yè)
文件大小: 537K
代理商: GS8170DD36C-250
GS8170DD36C-333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.03 1/2005
18/29
2002, GSI Technology, Inc.
Clock High to Data In Don’t Care
tKHDX
0.27
0.30
0.35
0.35
ns
Data In Valid to Clock Low
tDVKL
0.32
0.35
0.40
0.40
ns
Clock Low to Data In Don’t Care
tKLDX
0.27
0.30
0.35
0.35
ns
ADV Valid to Clock High
tadvVKH
0.6
0.7
0.8
0.8
ns
Clock High to ADV Don’t Care
tKHadvX
0.4
0.4
0.5
0.5
ns
AC Electrical Characteristics (Continued)
Parameter
Symbol
-333
-300
-250
-200
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
Notes:
1.
2.
3.
Measured at 100 mV from steady state. Not 100% tested.
Guaranteed by design. Not 100% tested.
For any specific temperature and voltage tKHCZ < tKHCX1.
相關(guān)PDF資料
PDF描述
GS8170DD36C-250I 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
GS8170DD36C-300 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
GS8170DD36C-300I 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
GS8170DD36C-333 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
GS8170DD36C-333I 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
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