- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄385317 > GS816272CGC-200 (GSI TECHNOLOGY) 256K x 72 18Mb S/DCD Sync Burst SRAMs PDF資料下載
參數(shù)資料
| 型號(hào)： | GS816272CGC-200 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 256K X 72 CACHE SRAM, 6.5 ns, PBGA209 |
| 封裝： | 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-209 |
| 文件頁(yè)數(shù)： | 10/31頁(yè) |
| 文件大?。?/td> | 678K |
| 代理商： | GS816272CGC-200 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)當(dāng)前第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)
GS816272CC-333/300/250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 2/2005
10/31
2004, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to 4.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS816272CGC-200I | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS816272CGC-250 | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS816272CGC-250I | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS816272CGC-300 | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS816272CGC-30I | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS816272CGC-300 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 5NS/2.8NS 209FBGA - Trays |
| GS816273C-133 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 3.5NS 209FBGA - Trays |
| GS816273C-133I | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 3.5NS 209FBGA - Trays |
| GS816273C-150 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 3.3NS 209FBGA - Trays |
| GS816273C-150I | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 3.3NS 209FBGA - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。