參數(shù)資料
型號: GS8161Z32D-225
廠商: Electronic Theatre Controls, Inc.
英文描述: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 35.7流水線和流量,通過同步唑的SRAM
文件頁數(shù): 16/36頁
文件大小: 939K
代理商: GS8161Z32D-225
GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.15 11/2004
16/36
1998, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
0.5 to 4.6
V
0.5 to 4.6
V
Voltage on I/O Pins
0.5 to V
DDQ
+0.5 (
4.6 V max.)
0.5 to V
DD
+0.5 (
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
20
mA
Output Current on Any I/O Pin
+/
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
55 to 125
o
C
T
BIAS
Temperature Under Bias
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS816236 16Mb(512K x 36Bit)S/DCD Sync Burst SRAM(16M位(512K x 36位)可選單/雙循環(huán)取消同步?jīng)_靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS816272 16Mb(256K x 72Bit)S/DCD Sync Burst SRAM(16M位(256K x 72位)可選單/雙循環(huán)取消同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS8162Z18BGB-200I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z18BB 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z18BB-150 18Mb Pipelined and Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161Z32D-225I 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z32D-225IT 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z32D-225T 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z32D-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z32D-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM