參數(shù)資料
型號(hào): GS8161Z18BT-250I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 1M X 18 ZBT SRAM, 5.5 ns, PQFP100
封裝: TQFP-100
文件頁(yè)數(shù): 22/37頁(yè)
文件大?。?/td> 618K
代理商: GS8161Z18BT-250I
GS8161Z18B(T/D)/GS8161Z32B(D)/GS8161Z36B(T/D)
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
22/37
2004, GSI Technology
Operating Currents
Notes:
1.
2.
I
DD
and I
DDQ
apply to any combination of V
DD3
, V
DD2
, V
DDQ3
, and V
DDQ2
operation.
All parameters listed are worst case scenario.
Parameter
Test Conditions
Mode
Symbol
-250
-200
-150
Unit
0
to
70°C
40
to
85°C
0
to
70°C
40
to
85°C
0
to
70°C
40
to
85°C
Operating
Current
Device Selected;
All other inputs
V
IH
o
r
V
IL
Output
open
(x32/
x36)
Pipeline
I
DD
I
DDQ
290
40
300
40
240
30
250
30
190
20
200
20
mA
Flow Through
I
DD
I
DDQ
220
20
230
20
190
15
200
15
175
15
185
15
mA
(x18)
Pipeline
I
DD
I
DDQ
260
20
270
20
215
15
225
15
170
15
180
15
mA
Flow Through
I
DD
I
DDQ
200
10
210
10
175
10
185
10
160
10
170
10
mA
Standby
Current
ZZ
V
DD
– 0.2 V
Pipeline
I
SB
40
50
40
50
40
50
mA
Flow Through
I
SB
40
50
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
V
IH
or
V
IL
Pipeline
I
DD
85
90
75
80
60
65
mA
Flow Through
I
DD
60
65
50
55
50
55
mA
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