參數(shù)資料
型號: GS8161Z18BD-200I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁數(shù): 21/37頁
文件大?。?/td> 618K
代理商: GS8161Z18BD-200I
GS8161Z18B(T/D)/GS8161Z32B(D)/GS8161Z36B(T/D)
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
21/37
2004, GSI Technology
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
Test Conditions
Min
Max
I
IL
V
IN
= 0 to V
DD
1 uA
1 uA
ZZ Input Current
I
IN1
V
DD
V
IN
V
IH
0 V
V
IN
V
IH
V
DD
V
IN
V
IL
0 V
V
IN
V
IL
Output Disable, V
OUT
= 0 to V
DD
I
OH
=
8 mA, V
DDQ
= 2.375 V
I
OH
=
8 mA, V
DDQ
= 3.135 V
I
OL
= 8 mA
1 uA
1 uA
1 uA
100 uA
FT Input Current
I
IN2
100 uA
1 uA
1 uA
1 uA
Output Leakage Current
I
OL
V
OH2
V
OH3
V
OL
1 uA
1 uA
Output High Voltage
1.7 V
Output High Voltage
2.4 V
Output Low Voltage
0.4 V
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