參數(shù)資料
型號: GS8161V36CGD-300I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
中文描述: 512K X 36 CACHE SRAM, 5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, LEAD FREE, FBGA-165
文件頁數(shù): 25/28頁
文件大小: 584K
代理商: GS8161V36CGD-300I
GS8161V18/36CD-333/300/250
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 2/2005
25/28
2004, GSI Technology
JTAG Port Timing Diagram
Boundary Scan (BSDL Files)
For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications
Engineering Department at: apps@gsitechnology.com.
JTAG Port AC Electrical Characteristics
Parameter
TCK Cycle Time
TCK Low to TDO Valid
TCK High Pulse Width
TCK Low Pulse Width
TDI & TMS Set Up Time
TDI & TMS Hold Time
Symbol
tTKC
tTKQ
tTKH
tTKL
tTS
tTH
Min
50
20
20
10
10
Max
20
Unit
ns
ns
ns
ns
ns
ns
tTH
tTS
tTKQ
tTH
tTS
tTH
tTS
tTKL
tTKH
tTKC
TCK
TDI
TMS
TDO
Parallel SRAM input
相關(guān)PDF資料
PDF描述
GS8161V36CGD-333 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V36CGD-333I 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161Z18B 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z32BD-250I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z32D 18Mb Pipelined and Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161V36CGD-333 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V36CGD-333I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161Z18 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18B 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18BD 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM