參數(shù)資料
型號(hào): GS8161V36CGD-250I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
中文描述: 512K X 36 CACHE SRAM, 5.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, LEAD FREE, FBGA-165
文件頁(yè)數(shù): 9/28頁(yè)
文件大小: 584K
代理商: GS8161V36CGD-250I
GS8161V18/36CD-333/300/250
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 2/2005
9/28
2004, GSI Technology
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
相關(guān)PDF資料
PDF描述
GS8161V36CGD-300 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V36CGD-300I 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V36CGD-333 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V36CGD-333I 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161Z18B 18Mb Pipelined and Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161V36CGD-300 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V36CGD-300I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V36CGD-333 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V36CGD-333I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161Z18 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM