參數(shù)資料
型號(hào)： GS8160Z36T-180I
英文描述： x36 Fast Synchronous SRAM
中文描述： x36快速同步SRAM
文件頁(yè)數(shù)： 14/24頁(yè)
文件大小： 468K
代理商： GS8160Z36T-180I
Rev: 2.06 8/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
14/24
1998, Giga Semconductor, Inc.
Preliminary
GS8160Z18/36T-225/200/180/166/150/133
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 2.5 V)
Note: This parameter is sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAMpower dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
2.
3.
Parameter
Symbol
C
I
C
IN
C
OUT
Test conditions
V
DD
= 2.5 V
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Control Input Capacitance
3
4
pF
Input Capacitance
4
5
pF
Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
R
Θ
JA
R
Θ
JA
R
Θ
JC
Max
Unit
°
C/W
°
C/W
°
C/W
Notes
Junction to Ambient (at 200 lfm
single
40
1,2
Junction to Ambient (at 200 lfm
four
24
1,2
Junction to Case (TOP)
—
9
3
20% tKC
V
SS
–
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
This Material Copyrighted by Its Respective Manufacturer
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