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參數(shù)資料
| 型號： | GS8160Z36 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM) |
| 中文描述： | 16Mb的流水線和流量，通過同步唑的SRAM（1,600位流水線式和流通型同步唑靜態(tài)內存） |
| 文件頁數(shù)： | 7/24頁 |
| 文件大小： | 476K |
| 代理商： | GS8160Z36 |
Rev: 2.08 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
7/24
1998, Giga Semiconductor, Inc.
Preliminary
GS8160Z18/36T-225/200/180/166/150/133
Synchronous Truth Table
Operation
Type
Address
E
1
E
2
E
3
ZZ ADV W Bx G CKE CK
DQ
Notes
Deselect Cycle, Power Down
D
None
H
X
X
L
L
X
X
X
L
L-H
High-Z
Deselect Cycle, Power Down
D
None
X
X
H
L
L
X
X
X
L
L-H
High-Z
Deselect Cycle, Power Down
D
None
X
L
X
L
L
X
X
X
L
L-H
High-Z
Deselect Cycle, Continue
D
None
X
X
X
L
H
X
X
X
L
L-H
High-Z
1
Read Cycle, Begin Burst
R
External
L
H
L
L
L
H
X
L
L
L-H
Q
Read Cycle, Continue Burst
B
Next
X
X
X
L
H
X
X
L
L
L-H
Q
1,10
NOP/Read, Begin Burst
R
External
L
H
L
L
L
H
X
H
L
L-H
High-Z
2
Dummy Read, Continue Burst
B
Next
X
X
X
L
H
X
X
H
L
L-H
High-Z
1,2,10
Write Cycle, Begin Burst
W
External
L
H
L
L
L
L
L
X
L
L-H
D
3
Write Cycle, Continue Burst
B
Next
X
X
X
L
H
X
L
X
L
L-H
D
1,3,10
NOP/Write Abort, Begin Burst
W
None
L
H
L
L
L
L
H
X
L
L-H
High-Z
2,3
Write Abort, Continue Burst
B
Next
X
X
X
L
H
X
H
X
L
L-H
High-Z 1,2,3,10
Clock Edge Ignore, Stall
Current
X
X
X
L
X
X
X
X
H
L-H
-
4
Sleep Mode
None
X
X
X
H
X
X
X
X
X
X
High-Z
Notes:
1.
Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Dese-
lect cycle is executed first.
Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W
pin is sampled low but no Byte Write pins are active so no write operation is performed.
G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during
write cycles.
If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus
will remain in High Z.
X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write
signals are Low
All inputs, except G and ZZ must meet setup and hold times of rising clock edge.
Wait states can be inserted by setting CKE high.
This device contains circuitry that ensures all outputs are in High Z during power-up.
A 2-bit burst counter is incorporated.
10. The address counter is incriminated for all Burst continue cycles.
2.
3.
4.
5.
6.
7.
8.
9.
相關PDF資料 |
PDF描述 |
|---|---|
| GS816118D-133 | Pin Strip Header; No. of Contacts:36; Pitch Spacing:0.1"; No. of Rows:2; Contact Material:Copper Alloy; Contact Plating:Gold; Leaded Process Compatible:Yes; Mounting Type:PCB Straight Thru Hole; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
| GS816118D-133I | 165 Bump BGA?x18 Commom I/O?Top View (Package D) |
| GS816118D-150 | Pin Strip Header; No. of Contacts:36; Pitch Spacing:0.1"; No. of Rows:2; Contact Material:Copper Alloy; Contact Plating:Gold; Leaded Process Compatible:Yes; Mounting Type:PCB Straight Thru Hole; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
| GS816118D-150I | 165 Bump BGA?x18 Commom I/O?Top View (Package D) |
| GS816118D-166 | Pin Strip Header; No. of Contacts:36; Pitch Spacing:0.1"; No. of Rows:2; Contact Material:Copper Alloy; Contact Plating:Gold; Leaded Process Compatible:Yes; Mounting Type:PCB Straight Thru Hole; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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| GS8160Z36BGT-150 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays |
| GS8160Z36BGT-150I | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays |
| GS8160Z36BGT-150IT | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays |
| GS8160Z36BGT-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays |
| GS8160Z36BGT-150T | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
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