參數(shù)資料
型號: GS8160E18
廠商: GSI TECHNOLOGY
英文描述: 16Mb(1M x 18Bit)Sync Burst SRAM(16M位(1M x 18位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
中文描述: 16Mb的(100萬x 18位)同步突發(fā)靜態(tài)存儲器(1,600位(100萬× 18位)同步靜態(tài)隨機(jī)存儲器(帶2位脈沖地址計(jì)數(shù)器))
文件頁數(shù): 23/26頁
文件大小: 519K
代理商: GS8160E18
Rev: 2.07 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
23/26
1999, Giga Semiconductor, Inc.
Preliminary
GS8160E18/32/36T-225/200/180/166/150/133
TQFP Package Drawing
D
D
E1
E
P
b
e
c
L
L1
A2
A1
Y
θ
Notes:
1.
2.
All dimensions are in millimeters (mm).
Package width and length do not include mold protrusion.
Symbol
Description
Min.
Nom.
Max
A1
Standoff
0.05
0.10
0.15
A2
Body Thickness
1.35
1.40
1.45
b
Lead Width
0.20
0.30
0.40
c
Lead Thickness
0.09
0.20
D
Terminal Dimension
21.9
22.0
22.1
D1
Package Body
19.9
20.0
20.1
E
Terminal Dimension
15.9
16.0
16.1
E1
Package Body
13.9
14.0
14.1
e
Lead Pitch
0.65
L
Foot Length
0.45
0.60
0.75
L1
Lead Length
1.00
Y
Coplanarity
0.10
θ
Lead Angle
0
°
7
°
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