參數(shù)資料
型號(hào)： GS816036T-225I
廠商： Electronic Theatre Controls, Inc.
英文描述： Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70
中文描述： 100萬× 18，512k × 32的，為512k × 36 35.7同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁數(shù)： 13/28頁
文件大?。?/td> 810K
代理商： GS816036T-225I
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
13/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Power Supply Voltage Ranges
V
DDQ3
Range Logic Levels
V
DDQ2
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
V
DD2
V
DDQ3
V
DDQ2
3.0
3.3
3.6
V
2.5 V Supply Voltage
3.3 V V
DDQ
I/O Supply Voltage
2.5 V V
DDQ
I/O Supply Voltage
2.3
2.5
2.7
3.6
V
3.0
3.3
V
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
DD
Input Low Voltage
V
DDQ
I/O Input High Voltage
V
DDQ
I/O Input Low Voltage
V
IH
V
IL
V
IHQ
V
ILQ
2.0
—
V
DD
+ 0.3
0.8
V
DDQ
+ 0.3
0.8
V
1
–
0.3
—
V
1
2.0
—
V
1,3
–
0.3
—
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
DD
Input Low Voltage
V
DDQ
I/O Input High Voltage
V
DDQ
I/O Input Low Voltage
V
IH
V
IL
V
IHQ
V
ILQ
0.6*V
DD
–
0.3
0.6*V
DD
–
0.3
—
V
DD
+ 0.3
0.3*V
DD
V
DDQ
+ 0.3
0.3*V
DD
V
1
—
V
1
—
V
1,3
—
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
相關(guān)PDF資料
PDF描述
GS816036T-250 Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70
GS816036T-250I Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70
GS8160E18 16Mb（1M x 18Bit）Sync Burst SRAM(16M位（1M x 18位）同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS8160E32 16Mb（512K x 36Bit）Sync Burst SRAM(16M位（512K x 36位）同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS8160E36 16Mb（256K x 72Bit）Sync Burst SRAM(16M位（256K x 72位）同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816036T-250 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8160E18BGT-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS8160E18BGT-150I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS8160E18BGT-150IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
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