參數(shù)資料
型號： GS816018T-150
廠商： Electronic Theatre Controls, Inc.
元件分類： DRAM
英文描述： 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述： 1M×18，512k×32，512k×36 18M位同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁數(shù)： 13/28頁
文件大小： 810K
代理商： GS816018T-150
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
13/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Power Supply Voltage Ranges
V
DDQ3
Range Logic Levels
V
DDQ2
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
V
DD2
V
DDQ3
V
DDQ2
3.0
3.3
3.6
V
2.5 V Supply Voltage
3.3 V V
DDQ
I/O Supply Voltage
2.5 V V
DDQ
I/O Supply Voltage
2.3
2.5
2.7
3.6
V
3.0
3.3
V
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
DD
Input Low Voltage
V
DDQ
I/O Input High Voltage
V
DDQ
I/O Input Low Voltage
V
IH
V
IL
V
IHQ
V
ILQ
2.0
—
V
DD
+ 0.3
0.8
V
DDQ
+ 0.3
0.8
V
1
–
0.3
—
V
1
2.0
—
V
1,3
–
0.3
—
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
DD
Input Low Voltage
V
DDQ
I/O Input High Voltage
V
DDQ
I/O Input Low Voltage
V
IH
V
IL
V
IHQ
V
ILQ
0.6*V
DD
–
0.3
0.6*V
DD
–
0.3
—
V
DD
+ 0.3
0.3*V
DD
V
DDQ
+ 0.3
0.3*V
DD
V
1
—
V
1
—
V
1,3
—
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
相關(guān)PDF資料
PDF描述
GS816018T-150I Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 2200uF; Voltage: 25V; Case Size: 18x35.5 mm; Packaging: Bulk
GS816018T-166 Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x11 mm; Packaging: Bulk
GS816018T-166I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-200 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-200I Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 330uF; Voltage: 25V; Case Size: 12.5x20 mm; Packaging: Bulk
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816018T-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-166 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-166I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-200 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-200I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
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