參數(shù)資料
型號(hào): GS76024AB
廠商: GSI TECHNOLOGY
英文描述: 256K x 24 6Mb Asynchronous SRAM
中文描述: 256K × 24 6MB的異步SRAM
文件頁(yè)數(shù): 1/12頁(yè)
文件大?。?/td> 471K
代理商: GS76024AB
GS76024AB
256K x 24
6Mb Asynchronous SRAM
8, 10, 12 ns
3.3 V V
DD
Center V
DD
and V
SS
BGA
Commercial Temp
Industrial Temp
Rev: 1.02 12/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
1/12
2003, GSI Technology
Features
Fast access time: 8, 10, 12 ns
CMOS low power operation: 260/210/180 mA at minimum
cycle time
Single 3.3 V ± 0.3V power supply
All inputs and outputs are TTL-compatible
Fully static operation
Industrial Temperature Option: –40 to 85°C
Package
B: 14 mm x 22 mm, 119-bump, 1.27 mm pitch BGA
Description
The GS76024A is a high speed CMOS static RAM organized
as 262,144 words by 24 bits. Static design eliminates the need
for external clocks or timing strobes. Operating on a single
3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS76024A is available in a 119-bump BGA
package.
119-bump Ball Grid Array Package
Pin Descriptions
Symbol
A
0
to A
17
WE
CE
V
DD
Description
Address input
Write enable input
Chip enable input
+3.3V power supply
Symbol
DQ
1
to DQ
24
OE
Description
Data input/output
Output enable input
V
SS
Ground
CE
WE
OE
Memory Array
Row
Decoder
Column
Decoder
Address
Input
Control
I/O Buffer
A
0
DQ
1
DQ
24
A
17
Block Diagram
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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GS76024AB-10I 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 6MBIT 256KX24 10NS 119FBGA - Trays
GS76024AB-12 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 24 6Mb Asynchronous SRAM
GS76024AB-12I 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 24 6Mb Asynchronous SRAM
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