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參數(shù)資料
| 型號(hào)： | GS74116J-10I |
| 英文描述： | x16 SRAM |
| 中文描述： | x16的SRAM |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 230K |
| 代理商： | GS74116J-10I |
Rev: 2.02 3/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
3/14
1999, Giga Semconductor, Inc.
N
GS74116TP/J/U
Note: X: “H” or “L”
Note:
Permanent device damage may occur if Absolute MaximumRatings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Truth Table
CE
OE
WE
LB
UB
DQ
1
to DQ
8
DQ
9
to DQ
16
V
DD
Current
H
X
X
X
X
Not Selected
Not Selected
ISB
1
, ISB
2
L
L
H
L
L
Read
Read
I
DD
L
H
Read
High Z
H
L
High Z
Read
L
X
L
L
L
Write
Write
L
H
Write
Not Write, High Z
H
L
Not Write, High Z
Write
L
H
H
X
X
High Z
High Z
L
X
X
H
H
High Z
High Z
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
-0.5 to +4.6
V
Input Voltage
V
IN
-0.5 to V
DD
+0.5
(
≤
4.6V max.)
V
Output Voltage
V
OUT
-0.5 to V
DD
+0.5
(
≤
4.6V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
T
STG
-55 to 150
o
C
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS74116J-12 | x16 SRAM |
| GS74116J-12I | x16 SRAM |
| GS74116J-15 | x16 SRAM |
| GS74116J-8 | x16 SRAM |
| GS74116J-8I | x16 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS74116J-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| GS74116J-12I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 16 4Mb Asynchronous SRAM |
| GS74116J-15 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 16 4Mb Asynchronous SRAM |
| GS74116J-15I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 16 4Mb Asynchronous SRAM |
| GS74116J-8 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 16 4Mb Asynchronous SRAM |
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