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參數(shù)資料
| 型號： | GS74108J-8 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 8 4Mb Asynchronous SRAM |
| 中文描述： | 為512k × 8 4Mb的異步SRAM |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 241K |
| 代理商： | GS74108J-8 |
Rev: 1.06 7/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
7/12
1999, Giga Semiconductor, Inc.
GS74108TP/J
Read Cycle 2: WE = V
IH
* These parameters are sampled and are not 100% tested
Write Cycle
Parameter
Symbol
-8
-10
-12
-15
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Write cycle time
tWC
8
---
10
---
12
---
15
---
ns
Address valid to end of write
tAW
5.5
---
7
---
8
---
10
---
ns
Chip enable to end of write
tCW
5.5
---
7
---
8
---
10
---
ns
Data set up time
tDW
4
---
5
---
6
---
7
---
ns
Data hold time
tDH
0
---
0
---
0
---
0
---
ns
Write pulse width
tWP
5.5
---
7
---
8
---
10
---
ns
Address set up time
tAS
0
---
0
---
0
---
0
---
ns
Write recovery time (WE)
tWR
0
---
0
---
0
---
0
---
ns
Write recovery time (CE)
tWR1
0
---
0
---
0
---
0
---
ns
tWLZ
*
3
---
3
---
3
---
3
---
ns
Write to output in High Z
tWHZ
*
---
3.5
---
4
---
5
---
6
ns
t
AA
t
RC
Address
t
AC
t
LZ
t
OE
t
OLZ
CE
OE
Data Out
t
HZ
t
OHZ
D
ATA
VALID
High impedance
相關PDF資料 |
PDF描述 |
|---|---|
| GS74108J-8I | 512K x 8 4Mb Asynchronous SRAM |
| GS74108TP | 512K x 8 4Mb Asynchronous SRAM |
| GS74108TP-10 | 512K x 8 4Mb Asynchronous SRAM |
| GS74108TP-10I | 512K x 8 4Mb Asynchronous SRAM |
| GS74108TP-12 | 512K x 8 4Mb Asynchronous SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS74108J-8I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108TP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108TP/J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 8 4 Mb Asynchronous SRAM |
| GS74108TP-10 | 制造商:GSI 功能描述: 制造商:GSI Technology 功能描述: |
| GS74108TP-10I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 8 4Mb Asynchronous SRAM |
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