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參數(shù)資料
| 型號： | GS74104J-8I |
| 英文描述： | x4 SRAM |
| 中文描述： | x4的SRAM |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 230K |
| 代理商： | GS74104J-8I |
Rev: 2.02 3/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
7/14
1999, Giga Semconductor, Inc.
N
GS74116TP/J/U
Read Cycle 2: WE = V
IH
*These parameters are sampled and are not 100% tested
Write Cycle
Parameter
Symbol
-8
-10
-12
-15
Unit
Mn
Max
Mn
Max
Mn
Max
Mn
Max
Write cycle time
tWC
8
---
10
---
12
---
15
---
ns
Address valid to end of write
tAW
5.5
---
7
---
8
---
10
---
ns
Chip enable to end of write
tCW
5.5
---
7
---
8
---
10
---
ns
Byte enable to end of write
tBW
5.5
---
7
---
8
---
10
---
ns
Data set up time
tDW
4
---
5
---
6
---
7
---
ns
Data hold time
tDH
0
---
0
---
0
---
0
---
ns
Write pulse width
tWP
5.5
---
7
---
8
---
10
---
ns
Address set up time
tAS
0
---
0
---
0
---
0
---
ns
Write recovery time (WE)
tWR
0
---
0
---
0
---
0
---
ns
Write recovery time (CE)
tWR1
0
---
0
---
0
---
0
---
ns
Output Low Z fromend of write
tWLZ
*
3
---
3
---
3
---
3
---
ns
Write to output in High Z
tWHZ
*
---
3.5
---
4
---
5
---
6
ns
tAA
tRC
Address
tAC
tLZ
tAB
tBLZ
tOE
tOLZ
CE
UB, LB
OE
Data Out
tHZ
tBHZ
tOHZ
Data valid
High impedance
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS74104TP-10 | x4 SRAM |
| GS74104TP-10I | x4 SRAM |
| GS74104TP-12 | x4 SRAM |
| GS74104TP-12I | x4 SRAM |
| GS74104TP-15 | x4 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS74104TP | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
| GS74104TP/J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 4 4Mb Asynchronous SRAM |
| GS74104TP-10 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
| GS74104TP-10I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
| GS74104TP-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SRAM |
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