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參數(shù)資料
| 型號： | GS74104J-12I |
| 英文描述： | x4 SRAM |
| 中文描述： | x4的SRAM |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 230K |
| 代理商： | GS74104J-12I |
Rev: 2.02 3/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
4/14
1999, Giga Semconductor, Inc.
N
GS74116TP/J/U
Note:
1.
2.
Input overshoot voltage should be less than V
DD
+2V and not exceed 20ns.
Input undershoot voltage should be greater than -2V and not exceed 20ns.
Notes:
1.
2.
Tested at T
A
=25°C, f=1MHz
These parameters are sampled and are not 100% tested
Recommended Operating Conditions
Parameter
Symbol
Mn
Typ
Max
Unit
Supply Voltage for -10/12/15
V
DD
3.0
3.3
3.6
V
Supply Voltage for -8
V
DD
3.135
3.3
3.6
V
Input High Voltage
V
IH
2.0
-
V
DD
+0.3
V
Input Low Voltage
V
IL
-0.3
-
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
-
70
o
C
Ambient Temperature,
Industrial Range
T
A
I
-40
-
85
o
C
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
C
IN
V
IN
=0V
5
pF
Output Capacitance
C
OUT
V
OUT
=0V
7
pF
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Mn
Max
Input Leakage
Current
I
IL
V
IN
= 0 to V
DD
-1uA
1uA
Output Leakage
Current
I
LO
Output High Z
V
OUT
= 0 to V
DD
-1uA
1uA
Output High Voltage
V
OH
I
OH
= - 4mA
2.4
Output Low Voltage
V
OL
I
LO
= + 4mA
0.4V
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS74104J-15 | x4 SRAM |
| GS74104J-15I | x4 SRAM |
| GS74104J-8 | x4 SRAM |
| GS74104J-8I | x4 SRAM |
| GS74104TP-10 | x4 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS74104J-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SRAM |
| GS74104J-15I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
| GS74104J-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SRAM |
| GS74104J-8I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
| GS74104TP | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
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