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參數(shù)資料
| 型號： | GS71108ASJ-10IT |
| 英文描述： | x8 SRAM |
| 中文描述： | x8的SRAM |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 240K |
| 代理商： | GS71108ASJ-10IT |
Rev: 1.02 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
3/15
2001, Giga Semiconductor, Inc.
GS71108ATP/J/SJ/U
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Notes:
1.
2.
Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
Input undershoot voltage should be greater than
–
2 V and not exceed 20 ns.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
–
0.5 to +4.6
V
Input Voltage
V
IN
–
0.5 to V
DD
+0.5
(
≤
4.6 V max.)
V
Output Voltage
V
OUT
–
0.5 to V
DD
+0.5
(
≤
4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
T
STG
–
55 to 150
o
C
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -10/-12
V
DD
3.0
3.3
3.6
V
Supply Voltage for -6/-8
V
DD
3.135
3.3
3.6
V
Input High Voltage
V
IH
2.0
—
V
DD
+0.3
V
Input Low Voltage
V
IL
–
0.3
—
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
—
70
o
C
Ambient Temperature,
Industrial Range
T
A
I
–
40
—
85
o
C
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PDF描述 |
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| GS71108ASJ-12IT | x8 SRAM |
| GS71108ASJ-12T | x8 SRAM |
| GS71108ASJ-8IT | x8 SRAM |
| GS71108ASJ-8T | x8 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS71108ASJ-10T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| GS71108ASJ-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K x 8 1Mb Asynchronous SRAM |
| GS71108ASJ-12I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K x 8 1Mb Asynchronous SRAM |
| GS71108ASJ-12IT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| GS71108ASJ-12T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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