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參數(shù)資料
| 型號(hào)： | GS411SD |
| 廠商： | GTM CORPORATION |
| 英文描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 中文描述： | 表面貼裝肖特基勢(shì)壘二極管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | GS411SD |
CORPORATION
GS411SD
Page: 1/2
ISSUED DATE :2005/12/20
REVISED DATE :
G
G S
S 441111S
S D
D
S
S U
U R
R F
F A
A C
C E
E M
M O
O U
U N
N T
T ,, S
S C
C H
H O
O T
T T
T K
K Y
Y B
B A
A R
R R
R II E
E R
R D
D II O
O D
D E
E
V
V O
O L
L T
T A
A G
G E
E 44 00 V
V ,, C
C U
U R
R R
R E
E N
N T
T 00 .. 55 A
A
Description
The GS411SD is designed for low power rectification.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at TA = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+125
:
Storage Temperature
Tstg
-40 ~ +125
:
Maximum Recurrent Peak Reverse Voltage
VRRM
40
V
Maximum RMS Voltage
VRMS
28
V
Maximum DC Blocking Voltage
VDC
20
V
Peak Forward Surge Current at 8.3mSec single half sine-wave
IFSM
3.0
A
Typical Junction Capacitance between Terminal (Note 1)
CJ
20
pF
Maximum Average Forward Rectified Current
Io
0.5
A
Total Power Dissipation
PD
225
mW
Electrical Characteristics (at TA = 25 : unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)R
40
-
V
IR=100 A
-
300
IF1=10mA
Maximum Instantaneous Forward Voltage
VF
-
500
mV
IF2=500mA
Maximum Average Reverse Current
IR
-
30
uA
VR=10V
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts.
2. ESD sensitive product handling required.
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