參數(shù)資料
型號(hào): GS1M-T3
廠(chǎng)商: WON-TOP ELECTRONICS CO LTD
元件分類(lèi): 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述: 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
中文描述: 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
封裝: PLASTIC, SMA, 2 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 66K
代理商: GS1M-T3
GS1A – GS1M
1 of 4
2006 Won-Top Electronics
Pb
GS1A – GS1M
1.0A SURFACE MOUNT STANDARD DIODE
Features
Diffused Junction
Ideally Suited for Automatic Assembly
B
Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
D
Low Power Loss
A
Built-in Strain Relief
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G
E
Mechanical Data
Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics @T
A=25°C unless otherwise specified
Characteristic
Symbol
GS1A
GS1B
GS1D
GS1G
GS1J
GS1K
GS1M
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current @TL = 100°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
1.10
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage
@TA = 125°C
IRM
5.0
200
A
Reverse Recovery Time (Note 1)
trr
2.5
S
Typical Junction Capacitance (Note 2)
Cj
15
pF
Typical Thermal Resistance (Note 3)
RθJL
30
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +175
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
2 land area.
WTE
POWER SEMICONDUCTORS
SMA/DO-214AC
Dim
Min
Max
A
2.29
2.92
B
4.00
4.60
C
1.27
1.90
D
0.152
0.305
E
4.80
5.30
F
2.00
2.44
G
0.051
0.203
H
0.76
1.52
All Dimensions in mm
相關(guān)PDF資料
PDF描述
GS1BW SURFACE MOUNT GENERAL PURPOSE RECTIFIER
GS1B SURFACE MOUNT RECTIFIER VOLTAGE - 50 TO 1000 Volts CURRENT - 1.0 Ampere
GS1B SURFACE MOUNT RECTIFIER
GS1B TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SILICON RECTIFIER
GS1B SURFACE MOUNT RECTIFIER(VOLTAGE- 50 to 1000 Volts CURRENT - 1.0 Ampere)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS1M-TP 功能描述:整流器 1000V 1A RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
GS1M-TPS05 制造商:MCC 制造商全稱(chēng):Micro Commercial Components 功能描述:1.0 Amp Silicon Rectifier 50 to 1000 Volts
GS1MTR 功能描述:DIODE GEN PURP 1KV 1A SMA 制造商:smc diode solutions 系列:- 包裝:剪切帶(CT) 零件狀態(tài):有效 二極管類(lèi)型:標(biāo)準(zhǔn) 電壓 - DC 反向(Vr)(最大值):1000V(1kV) 電流 - 平均整流(Io):1A 不同 If 時(shí)的電壓 - 正向(Vf):1.1V @ 1A 速度:標(biāo)準(zhǔn)恢復(fù) >500ns,> 200mA(Io) 反向恢復(fù)時(shí)間(trr):2.5μs 不同?Vr 時(shí)的電流 - 反向漏電流:5μA @ 1000V 不同?Vr,F(xiàn) 時(shí)的電容:15pF @ 4V,1MHz 安裝類(lèi)型:表面貼裝 封裝/外殼:DO-214AC,SMA 供應(yīng)商器件封裝:SMA(DO-214AC) 工作溫度 - 結(jié):-65°C ~ 175°C 標(biāo)準(zhǔn)包裝:1
GS1M-TR13 制造商:Micro Commercial Components (MCC) 功能描述:1 AMP STANDARD RE
GS1MU3 制造商:Schneider Electric 功能描述:DISCONNECT SWITCH 600VAC 200AMP IEC 制造商:SCHNEIDER ELECTRIC 功能描述:Electromechanical Switch Disconnect Switch 3P 200A