參數(shù)資料
型號: GS1333
廠商: GTM CORPORATION
英文描述: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: P溝道增強型功率MOSFET
文件頁數(shù): 1/4頁
文件大?。?/td> 310K
代理商: GS1333
1/4
ISSUED DATE :2005/03/10
REVISED DATE :
G
G S
S 11333333
P
P -- C
C H
H A
A N
N N
N E
E L
L E
E N
N H
H A
A N
N C
C E
E M
M E
E N
N T
T M
M O
O D
D E
E P
P O
O W
W E
E R
R M
M O
O S
S F
F E
E T
T
Description
The GS1333 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Simple Gate Drive
*Small Package Outline
*Fast Switching Speed
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
f 12
V
Continuous Drain Current3
ID @TA=25 :
-550
mA
Continuous Drain Current3
ID @TA=70 :
-440
mA
Pulsed Drain Current1,2
IDM
2.5
A
Total Power Dissipation
PD @TA=25 :
0.35
W
Linear Derating Factor
0.003
W/
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient3 Max.
Rthj-a
360
/W
BVDSS
-20V
RDS(ON)
800m
ID
-550mA
Pb Free Plating Product
相關PDF資料
PDF描述
GS138K N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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